| 摘要 |
PURPOSE: A pixel and imaging array with the same, and radioactive ray imaging system are provided to realize a higher fill factor, thereby increasing coplanar pixel sensitivity. CONSTITUTION: Scan lines are adjacent to the first surface of a substrate(220). A bias line(150) is located between the first surface and the first terminal of a photoelectric conversion device. A switching device is arranged together with at least some of the scan lines. The switching device includes a first terminal(800'), a second terminal(810'), and a gate electrode(610). The gate electrode is formed on the same metal layer as the bias line and the scan lines. |
