| 摘要 |
PURPOSE: An X-ray detector is provided to reduce height difference and thus leakage current between a PIN layer on the side of a lower electrode and another PIN layer on the top of the lower electrode. CONSTITUTION: An X-ray detector comprises a gate line(210), a lead-out line(240), a thin film transistor, a PIN diode(300) and a bias electrode(400). The gate line and the lead-out line are formed to cross on a substrate(100). The thin film transistor is formed on an area, in which the gate line and the lead-out line crosses. The thin film transistor comprises a gate electrode(212), an active layer(230), a source electrode(242) and a drain electrode(244). The PIN diode comprises a bottom electrode, a PIN layer and a top electrode. The bottom electrode is connected to the thin film transistor. The PIN layer is formed on the bottom electrode. The top electrode is formed on the PIN layer. The bias electrode is connected to the top electrode of the PIN diode. |
