SILICON CARBIDE AND METHOD OF FABRICATING THEREOF

摘要

PURPOSE: A silicon carbide with a superior crystalline of high purity is provided have little residual carbon amount by using polycarbosilane and silicon nano powder and more specifically to have silicon carbide with a superior crystalline of high purity more effectively by using high temperature mobility of polycarbosilane. CONSTITUTION: The method of silicon carbide includes: the step(S1) in which polycarbosilane, and the silicon nano powder and solvent are mixed and polycarbosilane solution is manufactured; the step(S2) impregnating preform after the S1 step in the polycarbosilane solution; the insolubizing step(S3) thermosetting the preform impregnated after the S2 step in 300°C to 150 for half an hour to 1 hour; and the plastic step(S4) heat-treating the thermoset preform in 1200 to 1800°C for 1~3 hours after the S3 step.