THIN FILM TRANSISTOR WITH ASYMMETRIC STAGGERED ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor applying an asymmetric electrode structure and a manufacturing method thereof are provided to form a channel at a low resistance state by asymmetrically forming a source electrode and a drain electrode around a channel layer. CONSTITUTION: A gate insulation layer(12) is located on a gate electrode(11). A source electrode(14a), a channel layer(13), and a drain electrode(14b) are located on the gate insulation layer. The source electrode and the drain electrode are asymmetrically formed around the channel layer. The channel layer includes a first surface and a second surface. The source electrode and the drain electrode are contacted with both ends of the channel layer.