| 摘要 |
<p>PURPOSE: A thin film transistor substrate and liquid crystal display device using the same are provided to shorten vapor deposit-processing time and improve element characteristics by excluding the need to form an active layer according an over-etching problem and shortening the current pass. CONSTITUTION: A thin film transistor substrate includes a substrate(100), a gate electrode(200), a gate insulating electrode(250), an active layer(300), a first and second etching control layer(320a,320b), a first and second ohmic contact layer(350a,350b), and a drain electrode(400b). The gate electrode is formed on the substrate. The gate insulating layer is formed on the gate electrode. The active layer is formed on the gate insulating layer. The first etching layer and second etching layer are separately formed on one side and another side of the active layer. The first ohmic contact layer is formed on the etching contact layer and the second ohmic contact layer is formed on the second etching control layer.</p> |
