发明名称 METHOD OF OPERATING A SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A method of operating a semiconductor memory device is provided to reduce an operation time by programming program data in a memory cells at the same time. CONSTITUTION: In a method of operating a semiconductor memory device, First and second memory cell blocks(110,120) share even and odd bit lines. A page buffer(200) comprises a bit line selection part(210) and first and second latches(220,230) The bit line selection part interlinks the even bit line or the odd bit line to a sense node. The first latch temporarily stores program data. The second latch senses the program state of the memory cell.
申请公布号 KR20110062266(A) 申请公布日期 2011.06.10
申请号 KR20090118934 申请日期 2009.12.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, BO KYEOM
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
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