发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A plasma processing apparatus is provided to minimize the size of the apparatus by omitting unnecessary spaces from the inside of a processing chamber. CONSTITUTION: A lower electrode(202) is installed in a processing chamber. An upper electrode(100) is installed at position corresponding to the lower electrode. A covering body(205) is installed at the upper side of the upper electrode. An annular unit(220) is downwardly protruded along the peripheral part of the upper electrode and is vertically moved by being in connection with the upper electrode.
申请公布号 KR20110063342(A) 申请公布日期 2011.06.10
申请号 KR20100121294 申请日期 2010.12.01
申请人 TOKYO ELECTRON LIMITED 发明人 IIZUKA HACHISHIRO
分类号 H01L21/3065 主分类号 H01L21/3065
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