| 摘要 |
FIELD: electricity. ^ SUBSTANCE: formation of more alloyed layer of n-type conductivity, which adjoins the base layer of semiconductor structure, is performed prior to formation of base by ion implantation method by using the mask for base; at that, dose of implanted atoms of donor impurity D, which is expressed in micro coulombs per square centimetre, is Dëñ0.04/erfc[Xj/(0.455*Xd)], where erfc - additional function of errors; Xd - depth of more alloyed layer of n-type conductivity as per level of 0.5 of maximum difference value of concentration of donors and acceptors in this layer; Xj - depth of base, and acceleration mode of implanted impurity is chosen so that depth of more alloyed layer of n-type conductivity is more than Xj, but less than Xj+W, where W - minimum distance between p-n junctions "base-low alloyed layer" of two adjacent cells. ^ EFFECT: improvement of combination of characteristics of bipolar transistor with insulated gate: breakdown voltage capacitor-emitter in interlocking state and saturation voltage capacitor-emitter in conducting state. ^ 2 tbl, 5 dwg |
