| 摘要 |
It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a light-receiving area. The solid-state image pickup element comprises a p-type planar semiconductor, a hole formed in the p-type planar semiconductor, a p+-type region formed in a bottom of the hole, a p+-type isolation region formed in a part of a sidewall of the hole and connected to the p+-type region, an n-type photoelectric conversion region formed beneath the p+-type region, a transfer electrode formed on the entire sidewall of the hole through a gate dielectric film, a CCD channel region formed in a top of the p-type planar semiconductor, and a read channel formed in a region of the p-type planar semiconductor between the n-type photoelectric conversion region and the CCD channel region.
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