发明名称 |
Method of fabricating quantum well structure |
摘要 |
In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.
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申请公布号 |
US7955881(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20090500074 |
申请日期 |
2009.07.09 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
AKITA KATSUSHI;SUMITOMO TAKAMICHI;ENYA YOHEI;KYONO TAKASHI;UENO MASAKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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