发明名称 Method of making semiconductor devices employing first and second carriers
摘要 A semiconductor device and method. One embodiment provides an integral array of first carriers and an integral array of second carries connected to the integral array of first carriers. First semiconductor chips are arranged on the integral array of first carriers. The integral array of second carriers is arranged over the first semiconductor chips.
申请公布号 US7955954(B2) 申请公布日期 2011.06.07
申请号 US20080102175 申请日期 2008.04.14
申请人 INFINEON TECHNOLOGIES AG 发明人 LANDAU STEFAN;MAHLER JOACHIM;WOWRA THOMAS
分类号 H01L21/301 主分类号 H01L21/301
代理机构 代理人
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