发明名称 |
Vertical type semiconductor device, method of manufacturing a vertical type semiconductor device and method of operating a vertical semiconductor device |
摘要 |
A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first impurity region. The single crystalline semiconductor pattern may be on the first impurity region. The single crystalline semiconductor pattern has a pillar shape substantially perpendicular to the substrate. A second impurity region may be formed in an upper portion of the single crystalline semiconductor pattern. The gate insulation layer structure may include a charge storage pattern, the gate insulation layer structure on a sidewall of the single crystalline semiconductor pattern. The gate electrode may be formed on the gate insulation layer structure and opposite the sidewall of the single crystalline semiconductor pattern. The gate electrode has an upper face substantially lower than that of the single crystalline semiconductor pattern.
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申请公布号 |
US7956407(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20090620923 |
申请日期 |
2009.11.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YONG-HOON;LEE JONG-WOOK;KANG JONG-HYUK |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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