| 摘要 |
Embodiments relate to an image sensor and a method of manufacturing the same. According to embodiments, an image sensor may include a first substrate having circuitry formed thereon. It may further include a photodiode bonded to the first substrate and electrically connected to the circuitry, and a contact plug at a pixel border that may be electrically connected with the circuitry and the photodiode. According to embodiments, the photodiode may include a first conductive type ion implantation region selectively provided in a crystalline semiconductor layer, and a second conductive type ion implantation region in contact with one side surface of the first conductive type ion implantation region.
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