发明名称 |
Capacitor of semiconductor device and method of fabricating the same |
摘要 |
Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom surface and three lateral sides of the capacitor top electrode, and a capacitor insulating layer between the capacitor top electrode and the capacitor bottom electrode.
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申请公布号 |
US7956398(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20090492102 |
申请日期 |
2009.06.25 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE KI MIN |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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