发明名称 Capacitor of semiconductor device and method of fabricating the same
摘要 Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom surface and three lateral sides of the capacitor top electrode, and a capacitor insulating layer between the capacitor top electrode and the capacitor bottom electrode.
申请公布号 US7956398(B2) 申请公布日期 2011.06.07
申请号 US20090492102 申请日期 2009.06.25
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 LEE KI MIN
分类号 H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 H01L27/108
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