发明名称 Information storage devices using movement of magnetic domain walls and methods of manufacturing the same
摘要 An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.
申请公布号 US7957175(B2) 申请公布日期 2011.06.07
申请号 US20070980353 申请日期 2007.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM CHEE-KHENG;CHO EUN-HYOUNG;CHOA SUNG-HOON
分类号 G11C19/00 主分类号 G11C19/00
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