发明名称 Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
摘要 A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.
申请公布号 US7956310(B2) 申请公布日期 2011.06.07
申请号 US20060529390 申请日期 2006.09.29
申请人 TOKYO ELECTRON LIMITED 发明人 KOSHIMIZU CHISHIO;SUZUKI TOMOHIRO
分类号 B23K10/00 主分类号 B23K10/00
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