发明名称 Method of growing electrical conductors
摘要 A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.
申请公布号 US7955979(B2) 申请公布日期 2011.06.07
申请号 US20080039689 申请日期 2008.02.28
申请人 ASM INTERNATIONAL N.V. 发明人 KOSTAMO JUHANA;SOININEN PEKKA J.;ELERS KAI-ERIK;HAUKKA SUVI
分类号 H01L21/31;H01L21/285;H01L21/3105;H01L21/44;H01L21/768;H01L21/8238 主分类号 H01L21/31
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