发明名称 |
Method of fabricating image sensor having reduced dark current |
摘要 |
An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
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申请公布号 |
US7955888(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20080231101 |
申请日期 |
2008.08.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BEAK HYOUN-MIN;OH TAE-SEOK;CHOI JONG-WON;OH SU-YOUNG |
分类号 |
H01L31/10 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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