发明名称 Wide-band amplifier circuit with improved gain flatness
摘要 There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.
申请公布号 US7956692(B2) 申请公布日期 2011.06.07
申请号 US20090620151 申请日期 2009.11.17
申请人 SAMSUNG ELECTRO-MECHANICS, CO., LTD. 发明人 JEONG MOON SUK;NA YOO SAM
分类号 H03F3/191 主分类号 H03F3/191
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