发明名称 |
Method of light induced plating on semiconductors |
摘要 |
Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.
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申请公布号 |
US7955977(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20090456790 |
申请日期 |
2009.06.23 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
HAMM GARY;JACQUES DAVID L. |
分类号 |
H01L21/68 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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