发明名称 Method of light induced plating on semiconductors
摘要 Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.
申请公布号 US7955977(B2) 申请公布日期 2011.06.07
申请号 US20090456790 申请日期 2009.06.23
申请人 ROHM AND HAAS ELECTRONIC MATERIALS LLC 发明人 HAMM GARY;JACQUES DAVID L.
分类号 H01L21/68 主分类号 H01L21/68
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