发明名称 |
Method for fabrication of polycrystalline diodes for resistive memories |
摘要 |
The present invention, in one embodiment, provides a method of producing a PN junction the method including at least the steps of providing a Si-containing substrate; forming an insulating layer on the Si-containing substrate; forming a via through the insulating layer to expose at least a portion of the Si-containing substrate; forming a seed layer of the exposed portion of the Si containing substrate; forming amorphous Si on at least the seed layer; converting at least a portion of the amorphous Si to provide crystalline Si; and forming a first dopant region abutting a second dopant region in the crystalline Si.
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申请公布号 |
US7955958(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20080027675 |
申请日期 |
2008.02.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;QIMONDA AG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
RAJENDRAN BIPIN;HAPP THOMAS;LUNG HSIANG-LAN;YANG MIN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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