发明名称 |
Structure and method to control oxidation in high-k gate structures |
摘要 |
In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.
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申请公布号 |
US7955926(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20080055682 |
申请日期 |
2008.03.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NATZLE WESLEY C.;MO RENEE T.;JHA RASHMI;SCHONENBERG KATHRYN T.;CONTI RICHARD A. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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