Semiconductor device manufacturing method

摘要

A process for producing a semiconductor device, comprising the wiring region forming step of forming a wiring region on a semiconductor substrate; the copper wiring layer forming step of forming a copper wiring layer on the formed wiring region by electrolytic plating technique, wherein the copper wiring layer is formed by passing a current of application pattern determined from the relationship between application pattern of current passed at electrolytic plating and impurity content characteristic in the formed copper wiring layer so that the impurity content in the formed copper wiring layer becomes desired one; and the wiring forming step of polishing the formed copper wiring layer into a wiring.