发明名称 Method of fabricating a semiconductor device
摘要 A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.
申请公布号 US7955873(B2) 申请公布日期 2011.06.07
申请号 US20090415757 申请日期 2009.03.31
申请人 INFINEON TECHNOLOGIES AG 发明人 MENGEL MANFRED;SPOETTL THOMAS;PUESCHNER FRANK
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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