发明名称 Method of manufacturing stacked semiconductor device
摘要 A first semiconductor element is mounted on a wiring board. A second semiconductor element having a portion projecting to an outer side of an outer periphery of the first semiconductor element is disposed on the first semiconductor element via an adhesive. The adhesive has a viscosity (μ0.5 rpm) at a low-rotation speed in a range from 10 Pa·s to 150 Pa·s and a thixotropic ratio of 2 or higher expressed by a ratio (μ0.5 rpm/μ5 rpm) of the viscosity (μ0.5 rpm) at the low-rotation speed to a viscosity (μ5 rpm) at a high-rotation speed. The second semiconductor element is bonded onto the first semiconductor element while the adhesive is filled in a hollow portion between the projecting portion of the second semiconductor element and the wiring board.
申请公布号 US7955896(B2) 申请公布日期 2011.06.07
申请号 US20090508905 申请日期 2009.07.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHIMURA ATSUSHI;OMIZO SHOKO
分类号 H01L21/00 主分类号 H01L21/00
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