发明名称 Exposure mask, pattern formation method, and exposure mask fabrication method
摘要 An exposure mask has a rectangular pattern, an auxiliary pattern, a translucent region, and a shielding region. The rectangular pattern includes a transparent region having a dimension equal to or greater than a critical resolution of exposure light. The auxiliary pattern is arranged around the rectangular pattern and includes a transparent region having a dimension smaller than the critical resolution. The translucent region is arranged between the rectangular pattern and the auxiliary pattern for shifting a phase of light transmitted through the rectangular pattern and the auxiliary pattern to an opposite phase. The shielding region is arranged around the auxiliary pattern.
申请公布号 US7955761(B2) 申请公布日期 2011.06.07
申请号 US20080212843 申请日期 2008.09.18
申请人 ELPIDA MEMORY, INC 发明人 YASUZATO TADAO
分类号 G03C5/00;G03F1/32;G03F1/36;G03F1/68;G03F1/76;G03F1/80;H01L21/027 主分类号 G03C5/00
代理机构 代理人
主权项
地址