发明名称 Manufacturing method of semiconductor device with surface mounting terminals
摘要 A semiconductor device manufacturing method in which a semiconductor chip is connected to first and second lead frames. Source and gate electrodes extending over a first main surface of the semiconductor chip are connected to first electrode plates of the first lead frame and a drain electrode on the second main surface of the semiconductor chip, opposite to the first main surface, is connected to a drain electrode plate of the second lead frame. A sealing body is formed to cover the semiconductor chip and lead frames, while leaving the top surface of the drain electrode plate exposed with respect to the sealing body. Unnecessary portions of the first and second lead frames are cut off and surface mounting terminals are formed from the portions of the first and second electrode plates projecting from the sealing body.
申请公布号 US7955902(B2) 申请公布日期 2011.06.07
申请号 US20100823424 申请日期 2010.06.25
申请人 RENESAS ELECTRONICS CORPORATION 发明人 HATA TOSHIYUKI;OTANI TAKESHI;SHIMIZU ICHIO
分类号 H01L21/50;H01L23/29;H01L23/495 主分类号 H01L21/50
代理机构 代理人
主权项
地址