METHODS OF COATING SUBSTRATE WITH PLASMA RESISTANT COATINGS AND RELATED COATED SUBSTRATES

摘要

The invention includes a method of coating a substrate with a plasma etch-resistant layer that exhibits reduced particulation comprising applying an coating layer to a substrate wherein coating layer has a thickness of about 20 microns or less and wherein the coating layer, after exposure to a fluorine based plasma for an amount of time, is substantially free of any cracks or fissures that span the cross section of the coating layer. [0062] A coated substrate prepared by the methods described. Also included in the invention are coated substrates for use as a structural element in a fluorine -based semiconductor wafer processing protocol, wherein the coating is a coating layer having a thickness of about 20 microns or less and wherein the coating layer, after exposure to a fluorine based plasma for an amount of time, is substantially free of any cracks or fissures that span the cross section of the coating layer and exhibits reduced particulation. [0063] Included are structural elements used in a fluorine-based semiconductor wafer processing protocol, wherein at least a portion of a surface of a structural element is coated with a coating layer that having a thickness of about 20 microns or less and wherein the coating layer, after exposure to a fluorine based plasma for an amount of time, is substantially free of any cracks or fissures that span the cross section of the coating layer and exhibits reduced particulation.