A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.
申请公布号
WO2011065965(A2)
申请公布日期
2011.06.03
申请号
WO2010US03013
申请日期
2010.11.22
申请人
LAM RESEARCH CORPORATION;DHINDSA, RAJINDER;MANKIDY, PRATIK;KIMBALL, CHRIS