SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor device and a method for fabricating the semiconductor device are provided. The method comprises: forming a transistor structure which comprises a gate region, a source region and a drain region in a semiconductor substrate; implementing a first silicification treatment to form a first metal silicide layer at the source and drain regions; depositing a first dielectric layer on the substrate, wherein the top of the first dielectric layer and the top of the gate region are at the same level; forming contact holes in the regions corresponding to the source and drain regions in the first dielectric layer; and implementing a second silicification treatment to form a second metal silicide layer at the gate region and in the contact holes, wherein the first metal silicide layer is formed to prevent the source and drain regions from being silicidized again in the second silicification treatment. Said method can reduce the gate resistance, and further reduce the difficulty during the RIE process by which the contact holes are formed on the gate region and the source/drain regions.