METHOD AND DEVICE FOR FORMING POLYCRYSTALLINE SILICON
摘要
Disclosed is a device for forming polycrystalline silicon. The disclosed device forms polycrystalline silicon by heat treating amorphous silicon which is formed on a substrate, and is characterized by comprising a pre-heating section (200) which pre-heats amorphous silicon, and a heat treating section (300) which performs crystallization heat treatment on the amorphous silicon that has been pre-heated in the pre-heating section (200).
申请公布号
WO2011065688(A2)
申请公布日期
2011.06.03
申请号
WO2010KR07872
申请日期
2010.11.09
申请人
TERASEMICON CORPORATION;LEE, BYUNG IL;PARK, KYOUNG WAN;HUR, KWAN SUN;KANG, HO YOUNG;SONG, JONG HO
发明人
LEE, BYUNG IL;PARK, KYOUNG WAN;HUR, KWAN SUN;KANG, HO YOUNG;SONG, JONG HO