METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING DYNAMIC THRESHOLD TRANSISTOR

摘要

A method of producing a semiconductor device, including: a step of etching a silicon substrate to leave a silicon substrate portion where a channel region is to be formed, to thereby form a first and a second trench on the first and second side of the substrate portion respectively; a step of filling the first and the second trench by sequentially epitaxially growing a semiconductor layer, which has etching selectivity with respect to silicon, and a silicon layer; a step of removing the semiconductor layer, which has etching selectivity with respect to silicon, by selective etching of the silicon layer and silicon substrate, and forming voids below the silicon layer at the first and the second side of the substrate portion; a step of at least partially filling the voids with buried insulation film; a step of forming a gate electrode on the silicon substrate portion through the gate insulating layer; and a step of forming a source region in the silicon layer at the first side of the silicon substrate portion, and forming a drain region in the silicon layer at the second side of the silicon substrate portion.