发明名称 CIRCUIT DE FILTRAGE COMPORTANT DES RESONATEURS ACOUSTIQUES COUPLES
摘要 <p>#CMT# #/CMT# The filter has a silicium substrate (100) including a left structure with upper and lower bulk acoustic wave resonators (120, 110) coupled to one another by an acoustic coupling layer (130). A right structure includes upper and lower resonators (220, 210) coupled to one another by the coupling layer. The lower resonators of the structures are spaced in a sufficient manner for allowing housing of a surface mounted resonator (300). The structures are coupled together via the resonator (300) whose electrodes and piezoelectric layer are similar to that of the lower resonators of the structures. #CMT# : #/CMT# An independent claim is also included for a method for fabricating a coupled resonator filter. #CMT#USE : #/CMT# Coupled resonator filter i.e. bulk acoustic wave resonator bandpass filter, for realizing a filtering circuit in a mobile telephone (claimed), which confirms to Wide Code Division Multiplexing Access, in a business application. #CMT#ADVANTAGE : #/CMT# The coupled bulk acoustic wave resonator offers high performance, reduced encumbrance, and high selectivity close to the bandwidth. The lower resonators of the structures are spaced in a sufficient manner for allowing housing of the surface mounted resonator, thus limiting the space used on the substrate. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view illustrating modification of a structure of a filter.'(Drawing includes non-English language text)' 100 : Silicium substrate 110, 210 : Lower bulk acoustic wave resonators 120, 220 : Upper bulk acoustic wave resonators 130 : Acoustic coupling layer 300 : Surface mounted resonator #CMT#INORGANIC CHEMISTRY : #/CMT# The resonators are made up of aluminum nitride zinc oxide, zinc sulfide or ferroelectric ceramic material. #CMT#METALLURGY : #/CMT# The resonators include electrodes made of tungsten, aluminum, copper, molybdenum, nickel, titanium, silver, gold or tantalum.</p>
申请公布号 FR2927743(B1) 申请公布日期 2011.06.03
申请号 FR20080000828 申请日期 2008.02.15
申请人 STMICROELECTRONICS SA;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) 发明人 BELOT DIDIER;SHIRAKAWA ALEXANDRE AUGUSTO;KERHERVE ERIC;CATHELIN ANDREIA;PHAM JEAN MARIE;JARY PIERRE
分类号 H03H9/02;H03H9/54;H03H9/60 主分类号 H03H9/02
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