SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL

摘要

A nonvolatile memory includes a memory cell including a first transistor and a second transistor. The first transistor includes a first channel, a first gate electrode, a first source electrode, and a first drain electrode. The second transistor includes a second channel made of oxide semiconductor material, a second gate electrode, a second source electrode, and a second drain electrode. One of the second source electrode and the second drain electrode is electrically connected to the first gate electrode. Data writing in the memory cell is done by raising the potential of a node between one of the second source electrode and the second drain electrode and the first gate electrode. Data erasure in the memory cell is done by irradiating the second channel with ultraviolet light and lowering the potential of the node.