发明名称 |
METHOD FOR PRODUCING A CONNECTION BETWEEN A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR MODULE RESISTANT TO HIGH TEMPERATURES AND TEMPERATURE CHANGES BY MEANS OF A TEMPERATURE IMPINGING PROCESS |
摘要 |
The invention relates to a method for producing a connection between a semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has been solidified at zero pressure using temperature sintering. |
申请公布号 |
WO2010091660(A3) |
申请公布日期 |
2011.06.03 |
申请号 |
WO2010DE00127 |
申请日期 |
2010.02.04 |
申请人 |
DANFOSS SILICON POWER GMBH;KOCK, MATHIAS;EISELE, RONALD |
发明人 |
KOCK, MATHIAS;EISELE, RONALD |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|