SEMICONDUCTOR MEMORY DEVICE HAVING STACKED GATE INCLUDING CHARGE ACCUMULATION LAYER AND CONTROL GATE,申请号KR20090022976-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE HAVING STACKED GATE INCLUDING CHARGE ACCUMULATION LAYER AND CONTROL GATE
摘要
申请公布号	KR101038602(B1)	申请公布日期	2011.06.03
申请号	KR20090022976	申请日期	2009.03.18
申请人		发明人
分类号	G11C16/34;G11C16/04;G11C16/26	主分类号	G11C16/34
代理机构		代理人
主权项
地址

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