发明名称 METHOD FOR PRODUCING NITRIDE CRYSTALS, AND PRODUCTION VESSEL AND MEMBERS
摘要 <p>Provided is a method for producing nitride crystals with which it is possible to inhibit precipitation of nitride crystals in parts other than on seed crystals and improve the efficiency of producing gallium nitride single crystals grown on seed crystals. When nitride crystals are produced by the ammonothermal method in a vessel holding a solution containing a mineralizer, the portions of the surfaces of the vessel and the members inside the vessel in contact with the solution are at least partially formed from a metal or alloy including one or more atoms selected from the group comprising tantalum (Ta), tungsten (W), and titanium (Ti), and the surface roughness (Ra) is less than 1.80 µm.</p>
申请公布号 WO2011065436(A1) 申请公布日期 2011.06.03
申请号 WO2010JP71041 申请日期 2010.11.25
申请人 MITSUBISHI CHEMICAL CORPORATION;TOHOKU UNIVERSITY;THE JAPAN STEEL WORKS, LTD.;MIKAWA YUTAKA;KIYOMI MAKIKO;KAGAMITANI YUJI;ISHIGURO TORU;YAMAMURA YOSHIHIKO 发明人 MIKAWA YUTAKA;KIYOMI MAKIKO;KAGAMITANI YUJI;ISHIGURO TORU;YAMAMURA YOSHIHIKO
分类号 C30B29/38;C30B7/10 主分类号 C30B29/38
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