| 发明名称 |
DUAL METAL INTERCONNECTS FOR IMPROVED GAP-FILL, RELIABILITY, AND REDUCED CAPACITANCE |
| 摘要 |
Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed. |
| 申请公布号 |
KR20110059752(A) |
申请公布日期 |
2011.06.03 |
| 申请号 |
KR20117007716 |
申请日期 |
2009.12.01 |
| 申请人 |
INTEL CORPORATION |
发明人 |
O'BRIEN KEVIN P.;AKOLKAR ROHAN N.;INDUKURI TEJASWI |
| 分类号 |
H01L21/28;H01L21/3205 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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