RUTHENIUM-FILM FORMING MATERIAL AND RUTHENIUM-FILM FORMING METHOD
摘要
<p>Disclosed is a ruthenium-film forming material which can be used to obtain a high-quality ruthenium film having few residual impurities and excellent storage stability. The ruthenium-film forming material contains a compound represented by general formula (1). (In general formula (1), R1-R4 each independently represent a hydrogen atom, a halogen atom, a C 1-10 hydrocarbon group or a C 1-10 halogenated hydrocarbon group, and R5 represents a C 1-12 divalent hydrocarbon group or a C 1-12 divalent halogenated hydrocarbon group.)</p>
