SEMICONDUCTOR DEVICE WITH GROUP III-V CHANNEL AND GROUP IV SOURCE-DRAIN AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device including a III-V group channel and a IV group source-drain and a manufacturing method thereof are provided to efficiently limit a channel carrier by forming a stacked structure like a quantum well, secondary electron gas or metal-oxide semiconductor. CONSTITUTION: A dummy gate material layer is deposited on a substrate(100). A dummy gate is defined from the dummy gate material layer by photolithography. A doping is performed by implanting self-aligned ions by using the dummy gate as a mask to form a source-drain(108). The dummy gate is removed. A recess is formed on the substrate between source-drain pairs by etching. A channel containing stack element is formed in the recess by epitaxy. A gate is formed on the channel containing stack element.