| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an epitaxial growth apparatus and an epitaxial growth method capable of manufacturing a high-quality epitaxial wafer by reducing variations in an in-plane temperature of a semiconductor wafer due to a deflection of a susceptor. <P>SOLUTION: The epitaxial growth apparatus forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port of processing gas includes a susceptor on a top surface of which the semiconductor wafer is placed in the chamber and a susceptor support shaft supporting the susceptor from its lower side, wherein the susceptor support shaft has a support located substantially coaxially with the center of the susceptor and at least four support arms extending radially from the top end of the support at regular intervals. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
