发明名称 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the occurrence of separation of a film and formation of leak path in a semiconductor device that includes an interlayer insulating film. <P>SOLUTION: The semiconductor device includes the interlayer insulating film 16 that has multiple holes. The interlayer insulating film 16 is a film having a single layer structure. In the interlayer insulating film 16, the diameters of the holes included in a lower surface region and in an upper surface region are smaller than those of the holes included in the center region between the upper region and lower region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011109036(A) 申请公布日期 2011.06.02
申请号 JP20090265436 申请日期 2009.11.20
申请人 PANASONIC CORP 发明人 SEO TOSHINORI
分类号 H01L21/316;H01L21/768;H01L23/522 主分类号 H01L21/316
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