METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR AND THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a technique for manufacturing a microcrystalline semiconductor layer with high mass productivity.

SOLUTION: In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other while facing. A hollow part is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow part of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. High-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.

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