| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor using an oxide semiconductor favorable in electric characteristics. SOLUTION: The thin film transistor has a structure including a gate electrode 20 formed on a substrate 10, a gate insulating film 30 on the gate electrode 20, an oxide semiconductor film 40 on the gate electrode 20 and the gate insulating film 30, a metal oxide film 60 on the oxide semiconductor layer 40, and a metal film 70 on the metal oxide film 60. The metal oxide film 60 is formed by forming the metal film 70 on the oxide semiconductor film 40. COPYRIGHT: (C)2011,JPO&INPIT |
