| 发明名称 |
ORGANOMETALLIC COMPOUND |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of vapor-depositing a metal-containing film by using a specific organometallic compound including a carbonyl-containing ligand. SOLUTION: The method of vapor-depositing the metal-containing film includes the steps of: providing a substrate in a vapor deposition reactor; conveying the organometallic compound of formula: [R<SP>2</SP>R<SP>1</SP>N(CO)]<SB>n</SB>M<SP>+m</SP>L<SP>1</SP><SB>(m-n)/p</SB>L<SP>2</SP><SB>q</SB>(wherein R<SP>1</SP>and R<SP>2</SP>are selected independently; X=N or P; M=a metal of group 7 to group 10; L<SP>1</SP>=an anionic ligand having a negative charge p; L<SP>2</SP>=a neutral ligand; m=the valance of M; n=1-6; p=1-2;q=0-4; m≥n) in a vapor phase to the reactor; and decomposing the organometallic compound to deposit the metal-containing film on the substrate. COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011106026(A) |
申请公布日期 |
2011.06.02 |
| 申请号 |
JP20100203859 |
申请日期 |
2010.09.13 |
| 申请人 |
ROHM & HAAS ELECTRONIC MATERIALS LLC |
发明人 |
WANG QING MIN;SHENAI-KHATKHATE DEODATTA V;LI HUAZHI |
| 分类号 |
C23C16/18;C07F15/00;C07F15/02 |
主分类号 |
C23C16/18 |
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