发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.
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申请公布号 |
US2011127612(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100882826 |
申请日期 |
2010.09.15 |
申请人 |
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发明人 |
CHA JAE-HAN;LEE KYUNG-HO;KIM SUN-GOO;CHOI HYUNG-SUK;KIM JU-HO;CHAE JIN-YOUNG;OH IN-TAEK |
分类号 |
H01L27/088;H01L21/336 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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