发明名称 MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL
摘要 Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
申请公布号 US2011128779(A1) 申请公布日期 2011.06.02
申请号 US20100957286 申请日期 2010.11.30
申请人 发明人 REDAELLI ANDREA;PIROVANO AGOSTINO
分类号 G11C11/00;H01L21/02;H01L45/00 主分类号 G11C11/00
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