APPARATUS FOR INDUCTIVELY COUPLED PLASMA PROCESSING

摘要

PURPOSE: An inductively coupled plasma processing device is provided to prevent a crack of a dielectric layer by preventing the sag of a lead plate and a dielectric. CONSTITUTION: A chamber body has a space unit for processing a substrate with plasma. An antenna forms an induced electric field in the chamber body. A plurality of dielectric layers insulate a space between the antenna and the chamber body. A lead plate(400) supports each dielectric layer under the plurality of dielectric layers. A lead plate includes an open hole which is connected to the chamber body. A load support unit(600) fixes the lead plate to the upper frame to support the load of the dielectric layer. A gas supply unit(700) is airtightly inserted into the open hole and supplies process gas to the chamber body.