| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a yield in EUVL using a reflective exposure mask formed on a reflective exposure mask blank. <P>SOLUTION: The reflective exposure mask MSK1 for use in EUVL includes a low reflectance conductor film LE1, a multilayered reflective film ML1, and an absorber AB1 which are formed sequentially on a mask substrate SUB1. The low reflectance conductor film LE1 has a reflectance for EUV light which is lower than that of the multilayered reflective film ML1 and the absorber AB1. In addition, the absorber AB1 forms an absorber pattern PA1 in a pattern region RP1 of the mask substrate SUB1. Further, the multilayered reflective film ML1 has a light shielding band SD1 formed by removing an area surrounding an outer periphery of the pattern region RP1 like a groove. The low reflectance conductor film LE1 is exposed on the bottom of the groove-shaped light shielding band SD1. <P>COPYRIGHT: (C)2011,JPO&INPIT |
