发明名称 RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which provides a pattern having an excellent line width roughness (LWR). <P>SOLUTION: This resist composition contains: a compound generating acid and base when irradiated with a radiation ray; a resin having an acid-labile group and insoluble or hardly soluble in aqueous alkali solutions but soluble in aqueous alkali solutions by the action of acid; and an acid generator. The base, generated by radiating the radiation to the compound which generates acid and base when irradiated with the radiation, is preferably a base satisfying the formula (IB). In the formula (IB); R<SP>1</SP>, R<SP>2</SP>, and R<SP>3</SP>respectively represent 1-12C hydrocarbon groups which may have substituent groups independently; and two or more bases selected from the group of R<SP>1</SP>, R<SP>2</SP>and R<SP>3</SP>may be tied together to form a ring. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011107691(A) 申请公布日期 2011.06.02
申请号 JP20100232306 申请日期 2010.10.15
申请人 SUMITOMO CHEMICAL CO LTD 发明人 MASUYAMA TATSURO;HIRAOKA TAKASHI
分类号 G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/004
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